ICP-CVD cluster, 2 sets |  Located at 118, Physics Building

The ICP-CVD system contains two chambers, one is main chamber with hot plate (4 inch, up to 1000 C), plasma power(<1000 W), controllable pressure (1 to 100 mTorr), and four mass flow meters, the other chamber is for loadlocking or transfer to glovebox. The system can be operated on computer for all procedure. It can be used for the growth of different kinds of two dimensional materials, especially graphene and h-BN.