电荷耦合等离子体增强化学气相沉积与手套学联用系统(ICP-CVD cluster), 2套 | 位置：物理楼118

The ICP-CVD system contains two chambers, one is main chamber with hot plate (4 inch, up to 1000 C), plasma power(<1000 W), controllable pressure (1 to 100 mTorr), and four mass flow meters, the other chamber is for loadlocking or transfer to glovebox. The system can be operated on computer for all procedure. It can be used for the growth of different kinds of two dimensional materials, especially graphene and h-BN.

ICP-CVD系统包含两个腔室，一个是带有热板的主腔室（4英寸，最高1000 C），等离子功率（<1000 W），可控压力（1至100 mTorr）和四个质量流量计， 其他腔室用于负载锁定或转移到手套箱。 该系统可以在计算机上进行所有操作。 它可用于生长各种二维材料，尤其是石墨烯和h-BN。